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Electronic States of Narrow-Gap Semiconductors Under Multi-Extreme Conditions

Af: Kazuto Akiba Engelsk Hardback

Electronic States of Narrow-Gap Semiconductors Under Multi-Extreme Conditions

Af: Kazuto Akiba Engelsk Hardback
Tjek vores konkurrenters priser

This book discusses the latest investigations into the electronic structure of narrow-gap semiconductors in extreme conditions, and describes in detail magnetic field and pressure measurements using two high-quality single crystals: black phosphorus (BP) and lead telluride (PbTe).

The book presents two significant findings for BP and PbTe. The first is the successful demonstration of the pressure-induced transition from semiconductor to semimetal in the electronic structure of BP using magnetoresistance measurements. The second is the quantitative estimation of how well the Dirac fermion description works for electronic properties in PbTe.

The overviews on BP and PbTe from the point of view of material properties help readers quickly understand the typical electronic character of narrow-gap semiconductor materials, which has recently attracted interest in topological features in condensed matter physics. Additionally the introductory review of the principles and methodology allows readers to understand the high magnetic field and pressure experiments.

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This book discusses the latest investigations into the electronic structure of narrow-gap semiconductors in extreme conditions, and describes in detail magnetic field and pressure measurements using two high-quality single crystals: black phosphorus (BP) and lead telluride (PbTe).

The book presents two significant findings for BP and PbTe. The first is the successful demonstration of the pressure-induced transition from semiconductor to semimetal in the electronic structure of BP using magnetoresistance measurements. The second is the quantitative estimation of how well the Dirac fermion description works for electronic properties in PbTe.

The overviews on BP and PbTe from the point of view of material properties help readers quickly understand the typical electronic character of narrow-gap semiconductor materials, which has recently attracted interest in topological features in condensed matter physics. Additionally the introductory review of the principles and methodology allows readers to understand the high magnetic field and pressure experiments.

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Se mere i:
Produktdetaljer
Sprog: Engelsk
Sider: 147
ISBN-13: 9789811371066
Indbinding: Hardback
Udgave:
ISBN-10: 9811371067
Kategori: Kondenserede fasers fysik: væskeform og faststoffysik
Udg. Dato: 15 apr 2019
Længde: 0mm
Bredde: 155mm
Højde: 235mm
Forlag: Springer Verlag, Singapore
Oplagsdato: 15 apr 2019
Forfatter(e): Kazuto Akiba
Forfatter(e) Kazuto Akiba

Kategori Kondenserede fasers fysik: væskeform og faststoffysik

ISBN-13 9789811371066

Sprog Engelsk

Indbinding Hardback

Sider 147

Udgave

Længde 0mm

Bredde 155mm

Højde 235mm

Udg. Dato 15 apr 2019

Oplagsdato 15 apr 2019

Forlag Springer Verlag, Singapore

Kategori sammenhænge