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Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications
Engelsk
Bogcover for Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications af , 9780367554156
Specifikationer
Sprog:
Engelsk
Sider:
130
ISBN-13:
9780367554156
Indbinding:
Paperback
ISBN-10:
0367554151
Udg. Dato:
25 sep 2023
Størrelse i cm:
23,4 x 15,6
Oplagsdato:
25 sep 2023
Paperback 2023
Format:

Bog beskrivelse

High electron mobility transistor (HEMT) has better performance potential than the conventional MOSFETs. Further, InAs is a perfect candidate for the HEMT device architecture owing to its peak electron mobility. Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. This book explains different types of device architectures available to enhance performance including InAs-based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs-based SG and DG-HEMT is also discussed. The main goal of this book is to characterize the InAs device to achieve terahertz frequency regime with proper device parameters.

Features:

  • Explains the influence of InAs material in the performance of HEMTs and MOS-HEMTs.
  • Covers novel indium arsenide architectures for achieving terahertz frequencies
  • Discusses impact of device parameters on frequency response
  • Illustrates noise characterization of optimized indium arsenide HEMTs
    • Introduces terahertz electronics including sources for terahertz applications.
  • This book is of special interest to researchers and graduate students in Electronics Engineering, High Electron Mobility Transistors, Semi-conductors, Communications, and Nanodevices.

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    Specifikationer
    Sprog:
    Engelsk
    Sider:
    130
    ISBN-13:
    9780367554156
    Indbinding:
    Paperback
    ISBN-10:
    0367554151
    Udg. Dato:
    25 sep 2023
    Størrelse i cm:
    23,4 x 15,6
    Oplagsdato:
    25 sep 2023
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