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Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion
Engelsk
Bogcover for Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion af , 9783030085940
Specifikationer
Sprog:
Engelsk
Sider:
232
ISBN-13:
9783030085940
Indbinding:
Paperback
ISBN-10:
3030085945
Udg. Dato:
30 jan 2019
Størrelse i cm:
23,5 x 15,5
Oplagsdato:
30 jan 2019

Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Engelsk
Paperback 2019
Format:

Bog beskrivelse
This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency andlower cost power conversion;Enables design of smaller, cheaper and more efficient power supplies.
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Specifikationer
Sprog:
Engelsk
Sider:
232
ISBN-13:
9783030085940
Indbinding:
Paperback
ISBN-10:
3030085945
Udg. Dato:
30 jan 2019
Størrelse i cm:
23,5 x 15,5
Oplagsdato:
30 jan 2019
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