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High-k Materials in Multi-Gate FET Devices
Engelsk
Bogcover for High-k Materials in Multi-Gate FET Devices af , 9780367639693
Specifikationer
Sprog:
Engelsk
Sider:
164
ISBN-13:
9780367639693
Indbinding:
Paperback
ISBN-10:
0367639696
Udg. Dato:
25 sep 2023
Størrelse i cm:
23,4 x 15,6
Oplagsdato:
25 sep 2023

High-k Materials in Multi-Gate FET Devices

Engelsk
Paperback 2023
Format:

Bog beskrivelse

High-k Materials in Multi-Gate FET Devices focuses on high-k materials for advanced FET devices. It discusses emerging challenges in the engineering and applications and considers issues with associated technologies. It covers the various way of utilizing high-k dielectrics in multi-gate FETs for enhancing their performance at the device as well as circuit level.

  • Provides basic knowledge about FET devices
  • Presents the motivation behind multi-gate FETs, including current and future trends in transistor technologies
  • Discusses fabrication and characterization of high-k materials
  • Contains a comprehensive analysis of the impact of high-k dielectrics utilized in the gate-oxide and the gate-sidewall spacers on the GIDL of emerging multi-gate FET architectures
  • Offers detailed application of high-k materials for advanced FET devices
  • Considers future research directions

This book is of value to researchers in materials science, electronics engineering, semiconductor device modeling, IT, and related disciplines studying nanodevices such as FinFET and Tunnel FET and device-circuit codesign issues.

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Specifikationer
Sprog:
Engelsk
Sider:
164
ISBN-13:
9780367639693
Indbinding:
Paperback
ISBN-10:
0367639696
Udg. Dato:
25 sep 2023
Størrelse i cm:
23,4 x 15,6
Oplagsdato:
25 sep 2023
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